Please use this identifier to cite or link to this item: https://hdl.handle.net/1889/3078
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dc.contributor.advisorSalviati, Giancarlo-
dc.contributor.authorNegri, Marco-
dc.date.accessioned2016-07-11T08:58:04Z-
dc.date.available2016-07-11T08:58:04Z-
dc.date.issued2016-03-09-
dc.identifier.urihttp://hdl.handle.net/1889/3078-
dc.description.abstractThe present thesis has been devoted to the synthesis and investigation of functional properties of silicon carbide thin films and nanowires. The work took profit from the experience of the research group in the synthesis of 3C-SiC from vapour phase. 3C-SiC thin films Thin films heteroepitaxy on silicon substrates was carried out in a vapour phase epitaxy reactor. The initial efforts were committed to the process development in order to enhance the crystal quality of the epi-layer. The carbonization process and a buffer layer procedure were optimized in order to obtain good quality monocrystalline 3C-SiC layers. The films characterization was used not only to improve the entire process, but also to assess the crystalline quality and to identify the defects. Methyltrichlorosilane (MTS) was introduced during the synthesis to increase the growth rate and enhance crystalline quality. The effect of synthesis parameters such as MTS flow and process temperature was studied in order to promote defect density reduction and the release of the strain due to lattice mismatch between 3C-SiC and silicon substrate. In-growth n-type doping was implemented using a nitrogen gas line and the effect of different synthesis parameters on doping level was studied. Raman measurements allowed a contactless characterization and evaluation of electrically active dopant. The effect of MTS on nitrogen incorporation was investigated and a promotion of dopant concentration together with a higher growth rate were demonstrated. This result allows to obtain higher doping concentrations without deteriorating crystal quality in 3C-SiC and, to the best of our knowledge, it has never been demonstrated before. 3C-SiC nanowires Core-shell SiC-SiO2 nanowires were synthesized using a chemical vapour deposition technique in an open tube configuration reactor on silicon substrates. Metal catalyst were used to promote a uniaxial growth and a dense bundle of nanowires 100 µm long and 60 nm thick was obtained. Substrate preparation was found to be fundamental in order to obtain a uniform nanowire density. Morphological characterization was carried out using scanning electron microscopy and the analysis of structural, compositional, optical properties is reported.it
dc.language.isoIngleseit
dc.publisherUniversità degli Studi di Parma. Dipartimento di Chimicait
dc.relation.ispartofseriesDottorato di ricerca in Scienza e Tecnologia dei Materiali Innovativiit
dc.rights© Marco Negri, 2016it
dc.subjectSilicon carbideit
dc.subjectNanostructuresit
dc.subjectThin filmsit
dc.subjectEpitaxyit
dc.subjectChemical vapour depositionit
dc.titleTuning the functional properties of Silicon Carbide Thin Film and Nanowiresit
dc.typeDoctoral thesisit
dc.subject.miurING-IND/22it
Appears in Collections:Scienze chimiche, Tesi di dottorato

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