Please use this identifier to cite or link to this item:
https://hdl.handle.net/1889/3076
Title: | Electrical investigation of p-type 4H-SiC heavily doped by ion implantation |
Authors: | Gorni, Marco |
Publisher: | Università degli Studi di Parma. Dipartimento di Fisica |
Document Type: | Doctoral thesis |
Data: | 2016 |
Rights: | © Marco Gorni, 2016 |
Appears in Collections: | Scienze chimiche. Tesi di dottorato |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
thesis.pdf | Tesi di dottorato | 3.93 MB | Adobe PDF | View/Open |
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